LONDON — U.S. chipmakers are using software from Applied Materials Inc. to check changes made by EDA vendors' optical proximity correction software for 65-nanometer manufacturing process development, ...
High‑NA EUV's reduced field size is driving new innovation in optical proximity correction and mask synthesis.
Some chip makers have been getting a boost from implementing optical proximity correction across the lithography process window at the 65- and even 90-nanometer nodes, but the practice will become ...
VELDHOVEN, The Netherlands--(BUSINESS WIRE)--Brion Technologies, a division of ASML, today announced a new product for its popular Tachyon computational lithography platform. Tachyon MB-SRAF ...
Experts at the Table: Semiconductor Engineering sat down to discuss optical and EUV photomasks issues, as well as the challenges facing the mask business, with Naoya Hayashi, research fellow at DNP; ...
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